Articles

Publications 2001

Anisotropy of conduction bandgvalues and interband momentum matrix elements in wurtzite GaN, A. V. Rodina, B. K. Meyer, Phys. Rev. B, v.64, n.24, 2001[/12/04]
Long electron spin memory times in gallium arsenide, R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, D. Gammon, S. Katzer, Jetp Lett., v.74, n.3, pp. 182-185, 2001[/08/01]
Spin-Flip Raman Study of Exchange Interactions in Bulk GaAs:Mn, V. F. Sapega, T. Ruf, M. Cardona, phys. stat. sol. (b), v.226, n.2, pp. 339-356, 2001[/08/01]
Excitation cross section of erbium in semiconductor matrices under optical pumping, O. B. Gusev, M. S. Bresler, P. E. Pak, I. N. Yassievich, M. Forcales, N. Q. Vinh, T. Gregorkiewicz, Phys. Rev. B, v.64, n.7, 2001[/07/05]
Erbium electroluminescence in an Al/a-Si:H(Er)/p-c-Si/Al heterostructure, I. O. Kon’kov, A. N. Kuznetsov, P. E. Pak, E. I. Terukov, L. S. Granitsyna, Tech. Phys. Lett., v.27, n.7, pp. 542-543, 2001[/07/01]
Ionization of an exciton moving perpendicular to a magnetic field in the GaAs/AlxGa1-x As superlattice, B. P. Zakharchenya, V. F. Sapega, Jetp Lett., v.74, n.1, pp. 32-35, 2001[/07/01]
Inelastic scattering of hot electrons in n-GaAs/AlAs types I and II multiple quantum wells doped with silicon, I. A. Akimov, V. F. Sapega, D. N. Mirlin, V. M. Ustinov, Physica E: Low-dimensional Systems and Nanostructures, v.10, n.4, pp. 505-510, 2001[/06/01]
Momentum Alignment and Spin Orientation of Photoexcited Electrons in GaAs in the Transition from Two- to Three-Dimensional Structures, I. A. Akimov, Semiconductors, v.35, n.6, p. 727, 2001[/06/01]
Electron and Nuclear Spin Interactions in the Optical Spectra of Single GaAs Quantum Dots, D. Gammon, A. L. Efros, T. A. Kennedy, M. Rosen, D. S. Katzer, D. Park, S. W. Brown, V. L. Korenev, I. A. Merkulov, Phys. Rev. Lett., v.86, n.22, pp. 5176-5179, 2001[/05/28]
Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As, W. Heimbrodt, T. Hartmann, P. J. Klar, M. Lampalzer, W. Stolz, K. Volz, A. Schaper, W. Treutmann, H. -. von Nidda, A. Loidl, T. Ruf, V. F. Sapega, Physica E: Low-dimensional Systems and Nanostructures, v.10, pp. 175-180, 2001[/05/01]
Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping, M. S. Bresler, O. B. Gusev, P. E. Pak, E. I. Terukov, I. N. Yassievich, Phys. Solid State, v.43, n.4, pp. 625-628, 2001[/04/01]
Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures, I. N. Yassievich, M. S. Bresler, O. B. Gusev, P. E. Pak, K. D. Tsendin, E. I. Terukov, Materials Science and Engineering: B, v.81, pp. 182-184, 2001[/04/01]
Magnetic-field-induced transitions between minibands in GaAs/AlxGa1-x As superlattices, V. F. Sapega, D. N. Mirlin, T. Ruf, M. Cardona, W. Winter, K. Eberl, Semiconductors, v.35, n.4, pp. 447-450, 2001[/04/01]
Dynamical Redistribution of Mean Electron Spin over the Energy Spectrum of Quantum Dots, V. K. Kalevich, M. Paillard, K. V. Kavokin, X. Marie, A. R. Kovsh, T. Amand, A. E. Zhukov, E. Vanelle, V. M. Ustinov, B. P. Zakharchenya, phys. stat. sol. (b), v.224, n.2, pp. 567-571, 2001[/03/01]
Conductivity of La1-x CaxMnO3 under magnetic resonance of Mn ions, R. Laiho, E. Lähderanta, L. S. Vlasenko, M. P. Vlasenko, V. S. Zakhvalinskii, Phys. Solid State, v.43, n.3, pp. 489-492, 2001[/03/01]
Surface gettering of background impurities and defects in GaAs wafers, L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, D. S. Poloskin, N. M. Shmidt, Semiconductors, v.35, n.2, pp. 177-180, 2001[/02/01]
Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity, L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, S. I. Kokhanovskii, D. S. Poloskin, N. M. Shmidt, Tech. Phys. Lett., v.27, n.1, pp. 9-10, 2001[/01/01]

Publications 2000

Acoustical plasma oscillations in photoexcited electron-hole plasma induced in GaAs layers embedded with InAs quantum dots, B. K. Bairamov, V. A. Voitenko, V. V. Toporov, B. P. Zakharchenya, M. Henini, A. J. Kent, Nanotechnology, v.11, n.4, pp. 314-317, 2000[/12/01]
Nanorelief of a GaN surface: The effect of sulfide treatment, V. N. Bessolov, Y. V. Zhilyaev, E. E. Zavarin, M. E. Kompan, E. V. Konenkova, A. S. Usikov, V. A. Fedirko, Semiconductors, v.34, n.11, pp. 1301-1304, 2000[/11/01]
Photoinduced formation of ferromagnetic clusters inLa0.9Ca0.1MnO3thin films, H. Huhtinen, R. Laiho, E. Lähderanta, L. S. Vlasenko, M. P. Vlasenko, V. S. Zakhvalinskii, Phys. Rev. B, v.62, n.17, pp. 11614-11618, 2000[/11/01]
Spin Repolarization Due to Pauli Blocking in Quantum Dots, M. Paillard, X. Marie, P. Renucci, T. Amand, V. K. Kalevich, K. V. Kavokin, V. M. Ustinov, phys. stat. sol. (b), v.221, n.1, pp. 71-75, 2000[/09/01]
Magnetic absorption of hexagonal crystals CdSe in strong and weak fields: Quasi-cubic approximation, A. B. Kapustina, B. V. Petrov, A. V. Rodina, R. P. Seisyan, Phys. Solid State, v.42, n.7, pp. 1242-1252, 2000[/07/01]
Field-modulated microwave absorption in thin YBaCuO films, H. Huhtinen, Physica B: Condensed Matter, pp. 949-950, 2000[/07/01]
Microwave absorption in micron- and nano-size YBaCuO powders, R. Laiho, Physica B: Condensed Matter, pp. 947-948, 2000[/07/01]
Weak- and strong-field magnetooptics of wurtzite CdSe: parameters of quasi-cubic approximation, A. B. Kapustina, B. V. Petrov, A. V. Rodina, R. P. Seisyan, Journal of Crystal Growth, pp. 899-903, 2000[/06/01]
Polarization-dependent inhomogeneous broadening of the edge luminescence band of hexagonal gallium nitride, M. E. Kompan, I. Y. Shabanov, Y. V. Zhilyaev, Phys. Solid State, v.42, n.6, pp. 1041-1044, 2000[/06/01]
Spin-flip Raman scattering in Mn-doped GaAs: exchange interaction and g factor renormalization, V. F. Sapega, T. Ruf, M. Cardona, Solid State Communications, v.114, n.11, pp. 573-577, 2000[/05/01]
Electron-spin quantum-beat dephasing in quantum wells as a probe of the hole band structure, X. Marie, T. Amand, J. Barrau, P. Renucci, P. Lejeune, V. K. Kalevich, Phys. Rev. B, v.61, n.16, pp. 11065-11077, 2000[/04/15]
Strictly Resonant Excitation of Carriers in Self-Assembled InAs/GaAs Quantum Dots, M. Paillard, X. Marie, E. Vanelle, T. Amand, V. K. Kalevich, V. M. Ustinov, N. N. Ledentsov, phys. stat. sol. (a), v.178, n.1, pp. 349-353, 2000[/03/01]
Anomalous birefringence of light in free-standing samples of porous silicon, M. E. Kompan, J. Salonen, I. Y. Shabanov, J. Exp. Theor. Phys., v.90, n.2, pp. 324-329, 2000[/02/01]
Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation, M. Paillard, X. Marie, E. Vanelle, T. Amand, V. K. Kalevich, A. R. Kovsh, A. E. Zhukov, V. M. Ustinov, v.76, n.1, pp. 76-78, 2000[/01/03]
try to import 10.1023/a:1009632114501, M. E. Kompan, V. B. Kulik, I. I. Novak, J. Salonen, A. V. Subashiev, v.7, pp. 275-278, 2000[/01/01]
Anisotropy of Optoelectronic Properties and Atomic Ordering in CdGeAs2, B. K. Bairamov, N. Fernelius, G. Irmer, J. Monecke, I. K. Polushina, R. Pandey, V. Y. Rud', Y. V. Rud', P. G. Schunemann, M. C. Ohmer, Jpn. J. Appl. Phys., v.39, p. 353, 2000[/01/01]

Publications 1999

Interaction between the exciton and nuclear spin systems in a self-organized ensemble of InP/InGaP size-quantized islands, R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, M. V. Lazarev, Phys. Solid State, v.41, n.12, pp. 2014-2019, 1999[/12/01]
Exciton Energy Structure in Wurtzite GaN, A. V. Rodina, M. Dietrich, A. Göldner, L. Eckey, A. L. Efros, M. Rosen, A. Hoffmann, B. K. Meyer, phys. stat. sol. (b), v.216, n.1, pp. 21-26, 1999[/11/01]
Dynamic self-polarization of nuclei in low-dimensional systems, V. L. Korenev, Jetp Lett., v.70, n.2, pp. 129-134, 1999[/07/01]

Publications 1998

Effective Mass Calculation of the Shallow Acceptor Ground State g-Factor for A3B5 Semiconductors, A. V. Malyshev, I. A. Merkulov, A. V. Rodina, phys. stat. sol. (b), v.210, n.2, pp. 865-868, 1998[/12/01]
Dynamic polarization of nuclei in a self-organized ensemble of quantum-size n-InP/InGaP islands, R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, P. E. Pak, M. N. Tkachuk, D. A. Vinokurov, I. S. Tarasov, Jetp Lett., v.68, n.9, pp. 745-749, 1998[/11/01]
Optical orientation of donor-bound excitons in nanosized InP/InGaP islands, R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, P. E. Pak, D. A. Vinokurov, O. V. Kovalenkov, I. S. Tarasov, Phys. Solid State, v.40, n.9, pp. 1587-1593, 1998[/09/01]
Ground-state characteristics of an acceptor center in wide-gap semiconductors with a weak spin-orbit coupling, A. V. Malyshev, I. A. Merkulov, A. V. Rodina, Phys. Solid State, v.40, n.6, pp. 917-923, 1998[/06/01]

Publications 1997

Spin diffusion of optically oriented electrons and photon entrainment in n-gallium arsenide, R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, M. N. Stepanova, Phys. Solid State, v.39, n.11, pp. 1765-1768, 1997[/11/01]
Fine structure of excitonic levels in quantum dots, R. I. Dzhioev, B. P. Zakharchenya, E. L. Ivchenko, V. L. Korenev, Y. G. Kusraev, N. N. Ledentsov, V. M. Ustinov, A. E. Zhukov, A. F. Tsatsul’nikov, Jetp Lett., v.65, n.10, pp. 804-809, 1997[/05/01]
Photoinduced exchange anisotropy in a ferromagnet/semiconductor hybrid, V. L. Korenev, Solid State Communications, v.102, n.1, pp. 13-16, 1997[/04/01]
Theory of acceptor-ground-state description and hot photoluminescence in cubic semiconductors, A. V. Malyshev, I. A. Merkulov, A. V. Rodina, Phys. Rev. B, v.55, n.7, pp. 4388-4399, 1997[/02/15]