Pak Petr Evgenevich

Position: lead electronics engineer
Ioffe DB: 1347
Publications
- Nuclear Spin relaxation mediated by Fermi-edge electrons in n-type GaAs, M. Kotur, R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, B. R. Namozov, P. E. Pak, Y. G. Kusrayev, Jetp Lett., v.99, n.1, pp. 37-41, 2014[/03/01]
- Excitation cross section of erbium in semiconductor matrices under optical pumping, O. B. Gusev, M. S. Bresler, P. E. Pak, I. N. Yassievich, M. Forcales, N. Q. Vinh, T. Gregorkiewicz, Phys. Rev. B, v.64, n.7, 2001[/07/05]
- Erbium electroluminescence in an Al/a-Si:H(Er)/p-c-Si/Al heterostructure, I. O. Kon’kov, A. N. Kuznetsov, P. E. Pak, E. I. Terukov, L. S. Granitsyna, Tech. Phys. Lett., v.27, n.7, pp. 542-543, 2001[/07/01]
- Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping, M. S. Bresler, O. B. Gusev, P. E. Pak, E. I. Terukov, I. N. Yassievich, Phys. Solid State, v.43, n.4, pp. 625-628, 2001[/04/01]
- Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures, I. N. Yassievich, M. S. Bresler, O. B. Gusev, P. E. Pak, K. D. Tsendin, E. I. Terukov, Materials Science and Engineering: B, v.81, pp. 182-184, 2001[/04/01]
- Dynamic polarization of nuclei in a self-organized ensemble of quantum-size n-InP/InGaP islands, R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, P. E. Pak, M. N. Tkachuk, D. A. Vinokurov, I. S. Tarasov, Jetp Lett., v.68, n.9, pp. 745-749, 1998[/11/01]
- Optical orientation of donor-bound excitons in nanosized InP/InGaP islands, R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, P. E. Pak, D. A. Vinokurov, O. V. Kovalenkov, I. S. Tarasov, Phys. Solid State, v.40, n.9, pp. 1587-1593, 1998[/09/01]