Articles

Publications 2005

Spin dynamics in dilute nitride semiconductors at room temperature, L. Lombez, P. -. Braun, H. Carrère, B. Urbaszek, P. Renucci, T. Amand, X. Marie, J. C. Harmand, V. K. Kalevich, v.87, n.25, 2005[/12/19]
Field-enhanced ionization of deep-level centers as a triggering mechanism for superfast impact ionization fronts in Si structures, P. Rodin, A. Rodina, I. Grekhov, Journal of Applied Physics, v.98, n.9, p. 94506, 2005[/11/01]
Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, M. E. Ware, E. A. Stinaff, D. Gammon, M. F. Doty, A. S. Bracker, D. Gershoni, V. L. Korenev, Ş. C. Bădescu, Y. Lyanda-Geller, T. L. Reinecke, Phys. Rev. Lett., v.95, n.17, 2005[/10/19]
Optical orientation and alignment of excitons in self-assembledCdSe∕ZnSequantum dots: The role of excited states, Y. G. Kusrayev, A. V. Koudinov, B. P. Zakharchenya, S. Lee, J. K. Furdyna, M. Dobrowolska, Phys. Rev. B, v.72, n.15, 2005[/10/03]
Spin-dependent recombination in GaAsN solid solutions, V. K. Kalevich, E. L. Ivchenko, M. M. Afanasiev, A. Y. Shiryaev, A. Y. Egorov, V. M. Ustinov, B. Pal, Y. Masumoto, Jetp Lett., v.82, n.7, pp. 455-458, 2005[/10/01]
Optical spin polarization and exchange interaction in doubly charged InAs self-assembled quantum dots, V. K. Kalevich, I. A. Merkulov, A. Y. Shiryaev, K. V. Kavokin, M. Ikezawa, T. Okuno, P. N. Brunkov, A. E. Zhukov, V. M. Ustinov, Y. Masumoto, Phys. Rev. B, v.72, n.4, 2005[/07/14]
Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiationin situat 4.2 K, L. S. Vlasenko, G. D. Watkins, Phys. Rev. B, v.72, n.3, 2005[/07/06]
Determination of strain-induced valence-band splitting in GaAsN thin films from circularly polarized photoluminescence, A. Y. Egorov, V. K. Kalevich, M. M. Afanasiev, A. Y. Shiryaev, V. M. Ustinov, M. Ikezawa, Y. Masumoto, v.98, n.1, 2005[/07/01]
Integrating magnetism into semiconductor electronics, B. P. Zakharchenya, V. L. Korenev, Phys.-Usp., v.48, n.6, pp. 603-608, 2005[/06/30]
Bulk GaN layers grown on oxidized silicon by vapor-phase epitaxy in a hydride-chloride system, Y. V. Zhilyaev, S. D. Raevskii, D. Z. Grabko, D. S. Leu, M. E. Kompan, S. A. Yusupova, M. P. Shcheglov, Tech. Phys. Lett., v.31, n.5, pp. 367-369, 2005[/05/01]
Spin dynamics in p‐doped InAs/GaAs quantum dots, P. F. Braun, L. Lombez, X. Marie, B. Urbaszek, M. Sénès, T. Amand, V. Kalevich, K. Kavokin, O. Krebs, P. Voisin, V. Ustinov, Physica Status Solidi (b), v.242, n.6, pp. 1233-1236, 2005[/05/01]
Polarization of Valence Band Holes in the (Ga,Mn)As Diluted Magnetic Semiconductor, V. F. Sapega, M. Moreno, M. Ramsteiner, L. Däweritz, K. H. Ploog, Phys. Rev. Lett., v.94, n.13, 2005[/04/04]
Direct Observation of the Electron Spin Relaxation Induced by Nuclei in Quantum Dots, P. -. Braun, X. Marie, L. Lombez, B. Urbaszek, T. Amand, P. Renucci, V. K. Kalevich, K. V. Kavokin, O. Krebs, P. Voisin, Y. Masumoto, Phys. Rev. Lett., v.94, n.11, 2005[/03/23]
Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO, L. S. Vlasenko, G. D. Watkins, Phys. Rev. B, v.71, n.12, 2005[/03/21]
Origin of the6885‐cm-1luminescence lines in ZnO: Vanadium versus copper, L. S. Vlasenko, G. D. Watkins, R. Helbig, Phys. Rev. B, v.71, n.11, 2005[/03/18]
Optical Pumping of the Electronic and Nuclear Spin of Single Charge-Tunable Quantum Dots, A. Bracker, E. Stinaff, D. Gammon, M. Ware, J. Tischler, A. Shabaev, A. Efros, D. Park, D. Gershoni, V. Korenev, I. Merkulov, Phys. Rev. Lett., v.94, n.4, 2005[/02/02]
Polarization spectroscopy of positive and negative trions in an InAs quantum dot, M. E. Ware, A. S. Bracker, E. Stinaff, D. Gammon, D. Gershoni, V. L. Korenev, Physica E: Low-dimensional Systems and Nanostructures, v.26, pp. 55-58, 2005[/02/01]
Optical spin polarization in double charged InAs self‐assembled quantum dots, V. K. Kalevich, I. A. Merkulov, A. Y. Shiryaev, K. V. Kavokin, M. Ikezawa, T. Okuno, P. N. Brunkov, A. E. Zhukov, V. M. Ustinov, Y. Masumoto, Physica Status Solidi (a), v.202, n.3, pp. 387-391, 2005[/02/01]
Colossal Magnetic Moment of Gd in GaN, S. Dhar, O. Brandt, M. Ramsteiner, V. F. Sapega, K. H. Ploog, Phys. Rev. Lett., v.94, n.3, 2005[/01/27]
Effect of Electron Irradiation on the Photopleochroism of ZnO∕CdS∕Cu(In,Ga)Se[sub 2] Solar Cells, B. K. Baı̆ramov, Tech. Phys. Lett., v.31, n.8, p. 698, 2005[/01/01]
Electron Spin Filtering in the GaAs∕AlGaAs Interface Space Charge Field, R. I. Dzhioev, Phys. Solid State, v.47, n.8, p. 1584, 2005[/01/01]

Publications 2004

Optical and magnetic anisotropies of the hole states in Stranski-Krastanov quantum dots, A. V. Koudinov, I. A. Akimov, Y. G. Kusrayev, F. Henneberger, Phys. Rev. B, v.70, n.24, 2004[/12/15]
Suppression of Dyakonov-Perel Spin Relaxation in High-Mobilityn-GaAs, R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, N. K. Poletaev, B. P. Zakharchenya, E. A. Stinaff, D. Gammon, A. S. Bracker, M. E. Ware, Phys. Rev. Lett., v.93, n.21, 2004[/11/15]
Electron‐phonon interactions in multi‐component plasma created by light‐ and heavy hole gas in polar semiconductors: from bulk to quantum dot structures, B. K. Bairamov, V. V. Toporov, V. A. Voitenko, G. Irmer, J. Monecke, phys. stat. sol. (c), v.1, n.11, pp. 2773-2778, 2004[/11/01]
Structural properties and dynamics of low‐energy collective excitations of water and lisozyme, F. B. Bayramov, V. V. Toporov, M. Petukhov, E. A. Glazunov, B. K. Bairamov, phys. stat. sol. (c), v.1, n.11, pp. 3134-3137, 2004[/11/01]
Raman spectroscopy of (CuInSe 2 ) X – (2ZnSe) 1‐X thin films, E. P. Zaretskaya, V. F. Gremenok, W. Schmitz, K. Bente, V. B. Zalesski, B. K. Bairamov, phys. stat. sol. (c), v.1, n.11, pp. 3106-3109, 2004[/11/01]
Photosensitive structures based on HgGa2S4 single crystals: Preparation and properties, V. Y. Rud’, Y. V. Rud’, B. K. Bairamov, G. A. Il’chuk, V. O. Ukrainets, N. Fernelius, P. G. Shunemann, Semiconductors, v.38, n.11, pp. 1291-1297, 2004[/11/01]
Influence of supramolecular ordering on photophysical properties of polyamidines, E. L. Aleksandrova, M. E. Kompan, M. M. Dudkina, A. V. Tenkovtsev, E. I. Terukov, Semiconductors, v.38, n.9, pp. 1074-1077, 2004[/09/01]
Hysteretic galvano-mechanical effect on charging and discharging ionistor structures, M. E. Kompan, V. P. Kuznetsov, V. V. Rozanov, A. V. Yakubovich, Phys. Solid State, v.46, n.6, pp. 1110-1112, 2004[/06/01]
Vertical transport of hot electrons in GaAs/AlAs superlattices, D. N. Mirlin, V. F. Sapega, V. M. Ustinov, Semiconductors, v.38, n.5, pp. 576-580, 2004[/05/01]
Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation, M. E. Kompan, A. E. Gorodetski, I. L. Tarasova, SSP, pp. 181-184, 2004[/04/01]
Magneto-optical properties of bound excitons in ZnO, A. V. Rodina, M. Strassburg, M. Dworzak, U. Haboeck, A. Hoffmann, A. Zeuner, H. R. Alves, D. M. Hofmann, B. K. Meyer, Phys. Rev. B, v.69, n.12, 2004[/03/11]
Identification of bound exciton complexes in ZnO, M. Strassburg, A. Rodina, M. Dworzak, U. Haboeck, I. L. Krestnikov, A. Hoffmann, O. Gelhausen, M. R. Phillips, H. R. Alves, A. Zeuner, D. M. Hofmann, B. K. Meyer, phys. stat. sol. (b), v.241, n.3, pp. 607-611, 2004[/03/01]
Optical spin polarization of holes in negatively charged InAs/GaAs self-assembled quantum dots, V. K. Kalevich, M. Ikezawa, T. Okuno, K. V. Kavokin, A. Y. Shiryaev, P. N. Brunkov, A. E. Zhukov, V. M. Ustinov, Y. Masumoto, Physica E: Low-dimensional Systems and Nanostructures, v.21, pp. 1018-1021, 2004[/03/01]
Bound exciton and donor–acceptor pair recombinations in ZnO, B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, A. V. Rodina, phys. stat. sol. (b), v.241, n.2, pp. 231-260, 2004[/02/01]
Erratum: “Electric control of magnetic moment in a ferromagnet/semiconductor hybrid system” [JETP Lett. 78 (9), 564 (2003)], V. L. Korenev, Jetp Lett., v.79, n.4, pp. 188-188, 2004[/02/01]
Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, A. Usui, H. Sunakawa, C. Sasaoka, M. Mizuta, Phys. Rev. B, v.69, n.4, 2004[/01/29]
Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, A. Usui, H. Sunakawa, M. Mizuta, Phys. Rev. B, v.69, n.4, 2004[/01/29]

Publications 2003

The hanle effect in nonuniformly doped GaAs, R. I. Dzhioev, B. P. Zakharchenya, K. V. Kavokin, M. V. Lazarev, Phys. Solid State, v.45, n.12, pp. 2255-2263, 2003[/12/01]
Electric control of magnetic moment in a ferromagnet/semiconductor hybrid system, V. L. Korenev, Jetp Lett., v.78, n.9, pp. 564-568, 2003[/11/01]
Well-known perovskites (cerates, cuprates, manganates): Problems and facts; A review of nontraditional approaches, Y. M. Baikova, M. E. Kompan, E. I. Nikulin, Y. P. Stepanov, I. I. Novak, T. I. Aksenova, I. V. Khromushin, K. D. Bukenov, A. K. Berdauletov, Z. V. Medvedeva, B. Z. Volchek, N. F. Uvarov, V. P. Gorelov, Ionics, v.9, pp. 395-403, 2003[/09/01]
Spectroscopic evidence of a mixed valence charge compensation in the process of proton intercalation into BaCeO3, M. Kompan, Solid State Ionics, pp. 1-5, 2003[/09/01]
Nonradiative recombination and kinetics of optically oriented electrons at the GaAs/AlGaAs interface, R. I. Dzhioev, K. V. Kavokin, Phys. Solid State, v.45, n.9, pp. 1644-1647, 2003[/09/01]
Light-induced heating effects in semimagnetic quantum wells, A. V. Koudinov, Y. G. Kusrayev, I. G. Aksyanov, Phys. Rev. B, v.68, n.8, 2003[/08/15]
The anomalous Hanle effect in semimagnetic semiconductor quantum wells, A. V. Kudinov, Y. G. Kusraev, I. A. Merkulov, K. V. Kavokin, I. G. Aksyanov, B. P. Zakharchenya, Phys. Solid State, v.45, n.7, pp. 1360-1373, 2003[/07/01]
Optical and electrical properties of polyamide acid and metal-polymer complex based on terbium, É. A. Lebedev, M. Y. Goikhman, M. E. Kompan, V. K. Kudoyarova, I. V. Podeshvo, E. I. Terukov, V. V. Kudryavtsev, Semiconductors, v.37, n.7, pp. 816-817, 2003[/07/01]
Polarized electrons, trions, and nuclei in charged quantum dots, A. S. Bracker, J. G. Tischler, V. L. Korenev, D. Gammon, phys. stat. sol. (b), v.238, n.2, pp. 266-272, 2003[/07/01]
Optical spin polarization in negatively charged InAs self‐assembled quantum dots under applied electric field, V. K. Kalevich, M. Ikezawa, T. Okuno, A. Y. Shiryaev, A. E. Zhukov, V. M. Ustinov, P. N. Brunkov, Y. Masumoto, Physica Status Solidi (b), v.238, n.2, pp. 250-253, 2003[/07/01]
Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors, V. Eremin, D. S. Poloskin, E. Verbitskaya, M. P. Vlasenko, L. S. Vlasenko, R. Laiho, T. O. Niinikoski, v.93, n.12, pp. 9659-9664, 2003[/06/15]
Mechanism of primary self-organization in porous silicon with a regular structure, M. E. Kompan, Phys. Solid State, v.45, n.5, pp. 948-952, 2003[/05/01]
Effect of the surface on the electron quantum size levels and electrongfactor in spherical semiconductor nanocrystals, A. V. Rodina, A. L. Efros, A. Y. Alekseev, Phys. Rev. B, v.67, n.15, 2003[/04/21]
Long-lived spin polarisation in the charged InP quantum dots, I. V. Ignatiev, I. Y. Gerlovin, M. Ikezawa, V. K. Kalevich, S. Y. Verbin, Y. Masumoto, Physica E: Low-dimensional Systems and Nanostructures, v.17, pp. 361-364, 2003[/04/01]
Radiationless recombination mechanisms in GaN surface layers determined from photoluminescence, V. N. Bessolov, V. V. Evstropov, A. L. Fradkov, V. A. Fedirko, M. E. Kompan, E. V. Konenkova, Y. V. Zhilyaev, phys. stat. sol. (a), v.195, n.1, pp. 106-111, 2003[/01/01]
Electronic and nuclear spin in the optical spectra of semiconductor quantum dots, D. Gammon, A. L. Efros, J. G. Tischler, A. S. Bracker, V. L. Korenev, I. A. Merkulov, pp. 207-280, 2003[/01/01]

Publications 2002

Low-temperature spin relaxation inn-type GaAs, R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, B. Y. Meltser, M. N. Stepanova, B. P. Zakharchenya, D. Gammon, D. S. Katzer, Phys. Rev. B, v.66, n.24, 2002[/12/20]
High-temperature annealing of bulk GaN layers, V. N. Bessolov, Y. V. Zhilyaev, M. E. Kompan, E. V. Konenkova, S. A. Kukushkin, M. V. Mesh, S. D. Raevskii, A. L. Fradkov, V. A. Fedirko, Tech. Phys. Lett., v.28, n.12, pp. 994-996, 2002[/12/01]
New low symmetry configuration of the two carbon–interstitial silicon complex in irradiated silicon, R. Laiho, M. P. Vlasenko, L. S. Vlasenko, Solid State Communications, v.124, pp. 403-406, 2002[/12/01]
Optical orientation and the Hanle effect of neutral and negatively charged excitons inGaAs/AlxGa1-xAsquantum wells, R. I. Dzhioev, V. L. Korenev, B. P. Zakharchenya, D. Gammon, A. S. Bracker, J. G. Tischler, D. S. Katzer, Phys. Rev. B, v.66, n.15, 2002[/10/30]
Dependence of GaN photoluminescence on the excitation intensity, V. N. Bessolov, V. V. Evstropov, M. E. Kompan, M. V. Mesh, Semiconductors, v.36, n.10, pp. 1128-1131, 2002[/10/01]
Spin dynamics in semiconductor nanocrystals, J. A. Gupta, D. D. Awschalom, A. L. Efros, A. V. Rodina, Phys. Rev. B, v.66, n.12, 2002[/09/11]
Luminescence of impurity-bound excitons in corundum, B. R. Namozov, V. A. Vetrov, S. M. Muradov, R. I. Zakharchenya, Phys. Solid State, v.44, n.8, pp. 1459-1462, 2002[/08/01]
Electron excitation of Ce3+in third group metal oxides, B. R. Namozov, V. A. Vetrov, S. M. Muradov, R. I. Zakharchenya, 2002[/07/12]
Luminescence spectra of nominally pure BaCeO3 perovskite crystals, M. E. Kompan, Y. M. Baikov, B. A. Melekh, A. V. Yakubovich, Phys. Solid State, v.44, n.7, pp. 1263-1267, 2002[/07/01]
<title>Gateable spin memory in InP quantum dots</title>, I. A. Yugova, I. V. Ignatiev, S. Y. Verbin, I. Y. Gerlovin, V. K. Kalevich, A. Y. Shiryaev, K. V. Kavokin, Y. Masumoto, 2002[/06/05]
<title>Paulo blockade in spin-flip Raman scattering via donor bound excitons</title>, A. V. Koudinov, Y. G. Kusrayev, B. P. Zakharchenya, D. Wolverson, J. J. Davies, J. Kossut, 2002[/06/05]
<title>Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures</title>, B. K. Bairamov, B. P. Zakharchenya, V. V. Toporov, V. A. Voitenko, F. B. Bairamov, M. Henini, 2002[/06/05]
Manipulation of the Spin Memory of Electrons inn-GaAs, R. I. Dzhioev, V. L. Korenev, I. A. Merkulov, B. P. Zakharchenya, D. Gammon, A. L. Efros, D. S. Katzer, Phys. Rev. Lett., v.88, n.25, 2002[/06/05]
Defects observed by optical detection of electron paramagnetic resonance in electron-irradiatedp-type GaN, L. S. Vlasenko, C. Bozdog, G. D. Watkins, F. Shahedipour, B. W. Wessels, Phys. Rev. B, v.65, n.20, 2002[/04/25]
Spectra of second-order Raman scattering in porous silicon, M. E. Kompan, I. I. Novak, V. B. Kulik, J. Exp. Theor. Phys., v.94, n.4, pp. 739-744, 2002[/04/01]
Electron Spin Redistribution Due to Pauli Blocking in Quantum Dots and Quantum Wells, V. K. Kalevich, M. Paillard, K. V. Kavokin, X. Marie, E. Vanelle, T. Amand, V. M. Ustinov, B. P. Zakharchenya, phys. stat. sol. (a), v.190, n.1, pp. 229-233, 2002[/03/01]
General boundary conditions for the envelope function in the multibandk⋅pmodel, A. V. Rodina, A. Y. Alekseev, A. L. Efros, M. Rosen, B. K. Meyer, Phys. Rev. B, v.65, n.12, 2002[/02/13]
Valence-band ordering and magneto-optic exciton fine structure in ZnO, W. R. Lambrecht, A. V. Rodina, S. Limpijumnong, B. Segall, B. K. Meyer, Phys. Rev. B, v.65, n.7, 2002[/01/23]
Anisotropy of Spin-Flip Raman Scattering in CdTe/CdMnTe Quantum Wells, Y. G. Kusrayev, A. V. Koudinov, D. Wolverson, J. Kossut, phys. stat. sol. (b), v.229, n.2, pp. 741-744, 2002[/01/01]
Theory of the Zeeman effect in semiconductor nanocrystals, A. V. Rodina, L. Efros, M. Rosen, B. K. Meyer, Materials Science and Engineering: C, v.19, pp. 435-438, 2002[/01/01]

Publications 2001

Anisotropy of conduction bandgvalues and interband momentum matrix elements in wurtzite GaN, A. V. Rodina, B. K. Meyer, Phys. Rev. B, v.64, n.24, 2001[/12/04]
Long electron spin memory times in gallium arsenide, R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, D. Gammon, S. Katzer, Jetp Lett., v.74, n.3, pp. 182-185, 2001[/08/01]
Spin-Flip Raman Study of Exchange Interactions in Bulk GaAs:Mn, V. F. Sapega, T. Ruf, M. Cardona, phys. stat. sol. (b), v.226, n.2, pp. 339-356, 2001[/08/01]
Excitation cross section of erbium in semiconductor matrices under optical pumping, O. B. Gusev, M. S. Bresler, P. E. Pak, I. N. Yassievich, M. Forcales, N. Q. Vinh, T. Gregorkiewicz, Phys. Rev. B, v.64, n.7, 2001[/07/05]
Erbium electroluminescence in an Al/a-Si:H(Er)/p-c-Si/Al heterostructure, I. O. Kon’kov, A. N. Kuznetsov, P. E. Pak, E. I. Terukov, L. S. Granitsyna, Tech. Phys. Lett., v.27, n.7, pp. 542-543, 2001[/07/01]
Ionization of an exciton moving perpendicular to a magnetic field in the GaAs/AlxGa1-x As superlattice, B. P. Zakharchenya, V. F. Sapega, Jetp Lett., v.74, n.1, pp. 32-35, 2001[/07/01]
Inelastic scattering of hot electrons in n-GaAs/AlAs types I and II multiple quantum wells doped with silicon, I. A. Akimov, V. F. Sapega, D. N. Mirlin, V. M. Ustinov, Physica E: Low-dimensional Systems and Nanostructures, v.10, n.4, pp. 505-510, 2001[/06/01]
Momentum Alignment and Spin Orientation of Photoexcited Electrons in GaAs in the Transition from Two- to Three-Dimensional Structures, I. A. Akimov, Semiconductors, v.35, n.6, p. 727, 2001[/06/01]
Electron and Nuclear Spin Interactions in the Optical Spectra of Single GaAs Quantum Dots, D. Gammon, A. L. Efros, T. A. Kennedy, M. Rosen, D. S. Katzer, D. Park, S. W. Brown, V. L. Korenev, I. A. Merkulov, Phys. Rev. Lett., v.86, n.22, pp. 5176-5179, 2001[/05/28]
Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As, W. Heimbrodt, T. Hartmann, P. J. Klar, M. Lampalzer, W. Stolz, K. Volz, A. Schaper, W. Treutmann, H. -. von Nidda, A. Loidl, T. Ruf, V. F. Sapega, Physica E: Low-dimensional Systems and Nanostructures, v.10, pp. 175-180, 2001[/05/01]
Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping, M. S. Bresler, O. B. Gusev, P. E. Pak, E. I. Terukov, I. N. Yassievich, Phys. Solid State, v.43, n.4, pp. 625-628, 2001[/04/01]
Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures, I. N. Yassievich, M. S. Bresler, O. B. Gusev, P. E. Pak, K. D. Tsendin, E. I. Terukov, Materials Science and Engineering: B, v.81, pp. 182-184, 2001[/04/01]
Magnetic-field-induced transitions between minibands in GaAs/AlxGa1-x As superlattices, V. F. Sapega, D. N. Mirlin, T. Ruf, M. Cardona, W. Winter, K. Eberl, Semiconductors, v.35, n.4, pp. 447-450, 2001[/04/01]
Dynamical Redistribution of Mean Electron Spin over the Energy Spectrum of Quantum Dots, V. K. Kalevich, M. Paillard, K. V. Kavokin, X. Marie, A. R. Kovsh, T. Amand, A. E. Zhukov, E. Vanelle, V. M. Ustinov, B. P. Zakharchenya, phys. stat. sol. (b), v.224, n.2, pp. 567-571, 2001[/03/01]
Conductivity of La1-x CaxMnO3 under magnetic resonance of Mn ions, R. Laiho, E. Lähderanta, L. S. Vlasenko, M. P. Vlasenko, V. S. Zakhvalinskii, Phys. Solid State, v.43, n.3, pp. 489-492, 2001[/03/01]
Surface gettering of background impurities and defects in GaAs wafers, L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, D. S. Poloskin, N. M. Shmidt, Semiconductors, v.35, n.2, pp. 177-180, 2001[/02/01]
Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity, L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, S. I. Kokhanovskii, D. S. Poloskin, N. M. Shmidt, Tech. Phys. Lett., v.27, n.1, pp. 9-10, 2001[/01/01]