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Компан Михаил Евгеньевич
Полное имя на английском: Kompan Mikhail Evgenevich
Учёная степень: доктор физико-математических наук
Должность: главный научный сотрудник
e-mail: kompan@mail.ioffe.ru
БД ФТИ: 0464
Публикации
- Carbon supported polyaniline as anode catalyst: Pathway to platinum-free fuel cells, A. G. Zabrodskiĭ, M. E. Kompan, V. G. Malyshkin, I. Y. Sapurina, Tech. Phys. Lett., v.32, n.9, pp. 758-761, 2006[/09/01]
- Overcoming the low-dimension crisis in the active zone of fuel cells, M. E. Kompan, I. Y. Sapurina, J. Stejskal, Tech. Phys. Lett., v.32, n.3, pp. 213-216, 2006[/03/01]
- Bulk GaN layers grown on oxidized silicon by vapor-phase epitaxy in a hydride-chloride system, Y. V. Zhilyaev, S. D. Raevskii, D. Z. Grabko, D. S. Leu, M. E. Kompan, S. A. Yusupova, M. P. Shcheglov, Tech. Phys. Lett., v.31, n.5, pp. 367-369, 2005[/05/01]
- Influence of supramolecular ordering on photophysical properties of polyamidines, E. L. Aleksandrova, M. E. Kompan, M. M. Dudkina, A. V. Tenkovtsev, E. I. Terukov, Semiconductors, v.38, n.9, pp. 1074-1077, 2004[/09/01]
- Hysteretic galvano-mechanical effect on charging and discharging ionistor structures, M. E. Kompan, V. P. Kuznetsov, V. V. Rozanov, A. V. Yakubovich, Phys. Solid State, v.46, n.6, pp. 1110-1112, 2004[/06/01]
- Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation, M. E. Kompan, A. E. Gorodetski, I. L. Tarasova, SSP, pp. 181-184, 2004[/04/01]
- Well-known perovskites (cerates, cuprates, manganates): Problems and facts; A review of nontraditional approaches, Y. M. Baikova, M. E. Kompan, E. I. Nikulin, Y. P. Stepanov, I. I. Novak, T. I. Aksenova, I. V. Khromushin, K. D. Bukenov, A. K. Berdauletov, Z. V. Medvedeva, B. Z. Volchek, N. F. Uvarov, V. P. Gorelov, Ionics, v.9, pp. 395-403, 2003[/09/01]
- Optical and electrical properties of polyamide acid and metal-polymer complex based on terbium, É. A. Lebedev, M. Y. Goikhman, M. E. Kompan, V. K. Kudoyarova, I. V. Podeshvo, E. I. Terukov, V. V. Kudryavtsev, Semiconductors, v.37, n.7, pp. 816-817, 2003[/07/01]
- Mechanism of primary self-organization in porous silicon with a regular structure, M. E. Kompan, Phys. Solid State, v.45, n.5, pp. 948-952, 2003[/05/01]
- Radiationless recombination mechanisms in GaN surface layers determined from photoluminescence, V. N. Bessolov, V. V. Evstropov, A. L. Fradkov, V. A. Fedirko, M. E. Kompan, E. V. Konenkova, Y. V. Zhilyaev, phys. stat. sol. (a), v.195, n.1, pp. 106-111, 2003[/01/01]