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Компан Михаил Евгеньевич
Полное имя на английском: Kompan Mikhail Evgenevich
Учёная степень: доктор физико-математических наук
Должность: главный научный сотрудник
e-mail: kompan@mail.ioffe.ru
БД ФТИ: 0464
Публикации
- High-temperature annealing of bulk GaN layers, V. N. Bessolov, Y. V. Zhilyaev, M. E. Kompan, E. V. Konenkova, S. A. Kukushkin, M. V. Mesh, S. D. Raevskii, A. L. Fradkov, V. A. Fedirko, Tech. Phys. Lett., v.28, n.12, pp. 994-996, 2002[/12/01]
- Dependence of GaN photoluminescence on the excitation intensity, V. N. Bessolov, V. V. Evstropov, M. E. Kompan, M. V. Mesh, Semiconductors, v.36, n.10, pp. 1128-1131, 2002[/10/01]
- Luminescence spectra of nominally pure BaCeO3 perovskite crystals, M. E. Kompan, Y. M. Baikov, B. A. Melekh, A. V. Yakubovich, Phys. Solid State, v.44, n.7, pp. 1263-1267, 2002[/07/01]
- Spectra of second-order Raman scattering in porous silicon, M. E. Kompan, I. I. Novak, V. B. Kulik, J. Exp. Theor. Phys., v.94, n.4, pp. 739-744, 2002[/04/01]
- Nanorelief of a GaN surface: The effect of sulfide treatment, V. N. Bessolov, Y. V. Zhilyaev, E. E. Zavarin, M. E. Kompan, E. V. Konenkova, A. S. Usikov, V. A. Fedirko, Semiconductors, v.34, n.11, pp. 1301-1304, 2000[/11/01]
- Polarization-dependent inhomogeneous broadening of the edge luminescence band of hexagonal gallium nitride, M. E. Kompan, I. Y. Shabanov, Y. V. Zhilyaev, Phys. Solid State, v.42, n.6, pp. 1041-1044, 2000[/06/01]
- Anomalous birefringence of light in free-standing samples of porous silicon, M. E. Kompan, J. Salonen, I. Y. Shabanov, J. Exp. Theor. Phys., v.90, n.2, pp. 324-329, 2000[/02/01]
- try to import 10.1023/a:1009632114501, M. E. Kompan, V. B. Kulik, I. I. Novak, J. Salonen, A. V. Subashiev, v.7, pp. 275-278, 2000[/01/01]