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Компан Михаил Евгеньевич
Полное имя на английском: Kompan Mikhail Evgenevich
Учёная степень: доктор физико-математических наук
Должность: главный научный сотрудник
e-mail: kompan@mail.ioffe.ru
БД ФТИ: 0464
Публикации
- Capacitance characteristics of nanoporous carbon materials in ionistors based on RbAg4I5 solid electrolyte, V. P. Kuznetsov, M. E. Kompan, Russ J Electrochem, v.45, n.5, pp. 538-541, 2009[/05/01]
- Luminescent-technique study on the structure of cation subsystem in the ionic conductor Na5RESi4O12 (RE is a rare-earth cation Tb3+, Ho3+, Er3+, Gd3+, Eu3+), M. E. Kompan, Russ J Electrochem, v.45, n.5, pp. 497-511, 2009[/05/01]
- Near-UV narrow-band luminescence of polyethylene and polytetrafluoroethylene, M. E. Kompan, I. G. Aksyanov, Phys. Solid State, v.51, n.5, pp. 1083-1086, 2009[/05/01]
- Self-organizing structure in platinum films on a Nafion type polymer membrane, M. E. Kompan, V. A. Klimov, V. V. Rozanov, A. A. Evstrapov, Tech. Phys. Lett., v.35, n.3, pp. 234-236, 2009[/03/01]
- Use of photophysically active units of ionic polypseudorotaxanes for analysis of the supramolecular structure of the polymer necklace, A. V. Ten’kovtsev, T. E. Sukhanova, M. E. Kompan, V. A. Lukoshkin, A. É. Bursian, M. P. Perminova, Phys. Solid State, v.51, n.3, pp. 620-625, 2009[/03/01]
- Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer, I. G. Aksyanov, V. N. Bessolov, Y. V. Zhilyaev, M. E. Kompan, E. V. Konenkova, S. A. Kukushkin, A. V. Osipov, S. N. Rodin, N. A. Feoktistov, S. Sharofidinov, M. P. Shcheglov, Tech. Phys. Lett., v.34, n.6, pp. 479-482, 2008[/06/01]
- Increasing the efficiency of metal-air current sources operating in a pulse-train mode, M. I. Danielyan, K. S. Kulakov, S. L. Kulakov, V. L. Tumanov, M. E. Kompan, Tech. Phys. Lett., v.33, n.7, pp. 597-599, 2007[/07/01]
- Nanocomposites with mixed electronic and protonic conduction for electrocatalysis, I. Y. Sapurina, M. E. Kompan, A. G. Zabrodskii, J. Stejskal, M. Trchova, Russ J Electrochem, v.43, n.5, pp. 528-536, 2007[/05/01]
- N-shaped nonlinearity of charge characteristics of ionistor structures based on RbAg 4I5, V. P. Kuznetsov, Y. V. Guzhov, M. E. Kompan, Russ J Electrochem, v.43, n.5, pp. 576-579, 2007[/05/01]
- Luminescence of the semimagnetic semiconductor CdMnTe in the wavelength range 370–400 nm at high excitation levels, I. G. Aksyanov, M. E. Kompan, M. V. Mesh, Phys. Solid State, v.49, n.4, pp. 691-695, 2007[/04/01]