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Dzhioev Roslan Ivanovich
Academic degree: candidate of physical and mathematical sciences
Position: senior scientific researcher
e-mail: dzhioev@orient.ioffe.ru
Ioffe DB: 0276
Projects
- РФФИ №19-52-12034 “Ферромагнитный эффект близости в гибридной структуре ферромагнетик-полупроводник”, head: V. L. Korenev (2019 - 2023)
Events
- 31.12.2012 Ioffe Institute Award for "Optical orientation of manganese ions in GaAs:Mn"
- 31.12.2004 Ioffe Institute Award for "Spin relaxation of electrons in n-type semiconductors"
- 31.12.1998 Ioffe Institute Award for "Photomagnetism of ferromagnetic/semiconductor hybrid systems"
- 31.12.1997 Ioffe Institute Award for "Fine structure of excitons in low-dimensional systems"
Publications
- Electrical control of optical orientation of neutral and negatively charged excitons in ann-type semiconductor quantum well, R. I. Dzhioev, V. L. Korenev, M. V. Lazarev, V. F. Sapega, D. Gammon, A. S. Bracker, Phys. Rev. B, v.75, n.3, 2007[/01/30]
- Study of the Hanle effect with the transverse component of the electron spin orientation in III–V semiconductors, R. I. Dzhioev, I. G. Aksyanov, M. V. Lazarev, O. A. Ninua, Phys. Solid State, v.48, n.12, pp. 2270-2274, 2006[/12/01]
- Electron Spin Filtering in the GaAs∕AlGaAs Interface Space Charge Field, R. I. Dzhioev, Phys. Solid State, v.47, n.8, p. 1584, 2005[/01/01]
- Suppression of Dyakonov-Perel Spin Relaxation in High-Mobilityn-GaAs, R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, N. K. Poletaev, B. P. Zakharchenya, E. A. Stinaff, D. Gammon, A. S. Bracker, M. E. Ware, Phys. Rev. Lett., v.93, n.21, 2004[/11/15]
- The hanle effect in nonuniformly doped GaAs, R. I. Dzhioev, B. P. Zakharchenya, K. V. Kavokin, M. V. Lazarev, Phys. Solid State, v.45, n.12, pp. 2255-2263, 2003[/12/01]
- Nonradiative recombination and kinetics of optically oriented electrons at the GaAs/AlGaAs interface, R. I. Dzhioev, K. V. Kavokin, Phys. Solid State, v.45, n.9, pp. 1644-1647, 2003[/09/01]
- Low-temperature spin relaxation inn-type GaAs, R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, B. Y. Meltser, M. N. Stepanova, B. P. Zakharchenya, D. Gammon, D. S. Katzer, Phys. Rev. B, v.66, n.24, 2002[/12/20]
- Optical orientation and the Hanle effect of neutral and negatively charged excitons inGaAs/AlxGa1-xAsquantum wells, R. I. Dzhioev, V. L. Korenev, B. P. Zakharchenya, D. Gammon, A. S. Bracker, J. G. Tischler, D. S. Katzer, Phys. Rev. B, v.66, n.15, 2002[/10/30]
- Manipulation of the Spin Memory of Electrons inn-GaAs, R. I. Dzhioev, V. L. Korenev, I. A. Merkulov, B. P. Zakharchenya, D. Gammon, A. L. Efros, D. S. Katzer, Phys. Rev. Lett., v.88, n.25, 2002[/06/05]
- Long electron spin memory times in gallium arsenide, R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev, D. Gammon, S. Katzer, Jetp Lett., v.74, n.3, pp. 182-185, 2001[/08/01]