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Afanasiev Mikhail Mikhailovich
Academic degree: candidate of physical and mathematical sciences
Position: senior scientific researcher
e-mail: m.afanasiev@mail.ioffe.ru
ORCID: 0000-0003-3955-8389
Ioffe DB: 0052
Projects
- РНФ 23-12-00205 “Спин-спиновые взаимодействия в разбавленных магнитных полупроводниках”, head: V. K. Kalevich (2023 - 2025)
Events
- 31.12.2020 Ioffe Institute Awards 2020
- 31.12.2017 Ioffe Institute Award for "Spin-dependent recombination and superfine interaction on deep paramagnetic defects"
- 13.05.2016 Ioffe Institute Awards 2015
- 31.12.2008 Ioffe Institute Awards 2008
Publications
- Ring-shaped polariton lasing in pillar microcavities, V. K. Kalevich, M. M. Afanasiev, V. A. Lukoshkin, K. V. Kavokin, S. I. Tsintzos, P. G. Savvidis, A. V. Kavokin, v.115, n.9, 2014[/03/07]
- Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature, V. K. Kalevich, M. M. Afanasiev, A. Y. Shiryaev, A. Y. Egorov, Jetp Lett., v.96, n.9, pp. 567-571, 2013[/01/01]
- Amplification of spin-filtering effect by magnetic field in GaAsN alloys, V. K. Kalevich, M. M. Afanasiev, A. Y. Shiryaev, A. Y. Egorov, Phys. Rev. B, v.85, n.3, 2012[/01/17]
- Optical orientation and spin-dependent recombination in GaAsN alloys under continuous-wave pumping, E. L. Ivchenko, V. K. Kalevich, A. Y. Shiryaev, M. M. Afanasiev, Y. Masumoto, J. Phys.: Condens. Matter, v.22, n.46, p. 465804, 2010[/11/24]
- Hanle effect and spin-dependent recombination at deep centers in GaAsN, V. K. Kalevich, A. Y. Shiryaev, E. L. Ivchenko, M. M. Afanasiev, A. Y. Egorov, V. M. Ustinov, Y. Masumoto, Physica B: Condensed Matter, v.404, pp. 4929-4932, 2009[/12/01]
- ESR study of photoinjection of hydrogen in nanostructured MoO3 thin films, A. I. Gavrilyuk, M. M. Afanasiev, Solar Energy Materials and Solar Cells, v.93, n.2, pp. 280-288, 2009[/02/01]
- The sign of electrong-factor in GaAs1-xNxmeasured by using the Hanle effect, V. K. Kalevich, E. L. Ivchenko, A. Y. Shiryaev, M. M. Afanasiev, A. Y. Egorov, M. Ikezawa, Y. Masumoto, Semicond. Sci. Technol., v.23, n.11, p. 114008, 2008[/11/01]
- Spin-dependent recombination in GaAsN solid solutions, V. K. Kalevich, E. L. Ivchenko, M. M. Afanasiev, A. Y. Shiryaev, A. Y. Egorov, V. M. Ustinov, B. Pal, Y. Masumoto, Jetp Lett., v.82, n.7, pp. 455-458, 2005[/10/01]
- Determination of strain-induced valence-band splitting in GaAsN thin films from circularly polarized photoluminescence, A. Y. Egorov, V. K. Kalevich, M. M. Afanasiev, A. Y. Shiryaev, V. M. Ustinov, M. Ikezawa, Y. Masumoto, v.98, n.1, 2005[/07/01]