Власенко Леонид Сергеевич

Полное имя на английском: Vlasenko Leonid Sergeevich

Учёная степень: доктор физико-математических наук

Должность: главный научный сотрудник

e-mail: leovlas@solid.ioffe.ru

БД ФТИ: 0168

Публикации

• Coherent Storage of Photoexcited Triplet States UsingSi29Nuclear Spins in Silicon, W. Akhtar, V. Filidou, T. Sekiguchi, E. Kawakami, T. Itahashi, L. S. Vlasenko, J. J. Morton, K. M. Itoh, Phys. Rev. Lett., v.108, n.9, 2012[/02/27]
• Optical properties of triplet states of excitons bound to interstitial-carbon interstitial-oxygen defects in silicon, T. Ishikawa, K. Koga, T. Itahashi, K. M. Itoh, L. S. Vlasenko, Phys. Rev. B, v.84, n.11, 2011[/09/15]
• Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon, W. Akhtar, H. Morishita, K. Sawano, Y. Shiraki, L. S. Vlasenko, K. M. Itoh, Phys. Rev. B, v.84, n.4, 2011[/07/08]
• Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon, H. Morishita, E. Abe, W. Akhtar, L. S. Vlasenko, A. Fujimoto, K. Sawano, Y. Shiraki, L. Dreher, H. Riemann, N. V. Abrosimov, P. Becker, H. Pohl, M. L. Thewalt, M. S. Brandt, K. M. Itoh, Appl. Phys. Express, v.4, n.2, p. 21302, 2011[/01/24]
• Splitting of electron paramagnetic resonance lines of lithium–oxygen centers in isotopically enriched single crystals, M. R. Rahman, M. P. Valasenko, L. S. Vlasenko, E. E. Haller, K. M. Itoh, Solid State Communications, v.150, pp. 2275-2277, 2010[/12/01]
• Dynamic Nuclear Polarization of 29Si Nuclei Induced by Li and Li–O Centers in Silicon, M. R. Rahman, T. Itahashi, M. P. Vlasenko, L. S. Vlasenko, E. E. Haller, K. M. Itoh, Jpn. J. Appl. Phys., v.49, p. 103001, 2010[/10/01]
• Magnetic Resonance Studies of Intrinsic Defects in ZnO: Oxygen Vacancy, L. S. Vlasenko, Appl Magn Reson, v.39, pp. 103-111, 2010[/10/01]
• Percolation of ferromagnetism in ZnO codoped with Fe and Mg, R. Laiho, I. Ojala, L. S. Vlasenko, v.108, n.5, 2010[/09/01]
• Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction, D. Dagnelund, I. P. Vorona, L. S. Vlasenko, X. J. Wang, A. Utsumi, Y. Furukawa, A. Wakahara, H. Yonezu, I. A. Buyanova, W. M. Chen, Phys. Rev. B, v.81, n.11, 2010[/03/31]
• Point defects in ZnO: Electron paramagnetic resonance study, L. S. Vlasenko, Physica B: Condensed Matter, v.404, pp. 4774-4778, 2009[/12/01]

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